Datasheet Details
- Part number
- VTSU011K2
- Manufacturer
- Innogration
- File Size
- 789.60 KB
- Datasheet
- VTSU011K2-Innogration.pdf
- Description
- RF Power N-channel MOSFET
VTSU011K2 Description
Innogration (Suzhou) Co., Ltd.1200W, 100V RF Power N-channel MOSFETs .
The VTSU011K2 is a 1200-watt, N-channel MOSFETs, designed for pulsed
applications at frequencies up to 200 MHz.
VTSU011K2 Features
* Common source configuration, push pull
* Excellent thermal stability, low HCI drift
* Low RDS(on)
* Pb-free, RoHS-compliant
Table 1. Maximum Ratings Rating
Drain-Source Voltage Drain-Gate Voltage (RGS = 1MΩ) Gate-Source Voltage Storage Temperature Range Case Operating Temperature O
VTSU011K2 Applications
* at frequencies up to 200 MHz. It’s suitable for use in industrial, scientific and medical applications.
* Typical Performance (In Demo Fixture): VDD = 100 Volts, IDQ = 500 mA, Pulse CW, Pulse Width=1ms, Duty cycle=10%
Frequency Gp (dB)
POUT (W)
D (%)
120 MHz
26
1200
60
Document Numbe
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