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MK1160VP - High Power RF LDMOS FET

Description

avionics amplifier applications with frequencies from 1000 MHz to 1100 MHz.

There is no guarantee of performance when this part is used in applications designed outside of these frequencies.

Typic

Features

  • Avionics: Mode-S, TCAS,JTIDS,DME and TACAN.
  • Thermally Enhanced Industry Standard Package.
  • High Reliability Metallization Process.
  • Excellent thermal Stability and Excellent Ruggedness.
  • Co.

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Datasheet Details

Part number MK1160VP
Manufacturer Innogration
File Size 551.19 KB
Description High Power RF LDMOS FET
Datasheet download datasheet MK1160VP Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MK1160VP LDMOS TRANSISTOR Document Number: MK1160VP Preliminary Datasheet V1.0 1000-1100MHz, 50V, 600W, RF Power LDMOS Transistor Description The MK1160VP is a 600-watt, internally matched LDMOS FETs, designed for civilian pulsed avionics amplifier applications with frequencies from 1000 MHz to 1100 MHz. There is no guarantee of performance when this part is used in applications designed outside of these frequencies. MK1160VP Typical Performance(On Innogration fixture with device soldered): VDD = 50 Volts, IDQ = 100 mA, Pulse CW, Pulse Width=10 us, Duty cycle=10% . Frequency Gain(dB) P3dB (W) D@P3dB (%) 1030 MHz 13.9 700 46.5 1060 MHz 14.3 680 48.6 1090 MHz 14.5 664 50.7 Note: This device is only used as single-ended device.
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