MK1040VP - High Power RF LDMOS FET

Product Overview

Innogration

Datasheet Details

Part number	MK1040VP
Manufacturer	Innogration
File Size	468.41 KB
Description	High Power RF LDMOS FET
Datasheet	MK1040VP Datasheet
Additional preview pages of the MK1040VP datasheet.

Product details

Description

The MK1040VP is a 400-watt, high performance, internally matched LDMOS FET, designed for wide-band commercial and industrial applications with frequencies 0.5 to 1GHz. Typical performance(on 0.5-1GHz wideband test board with device soldered) Signal：pulse CW, pulse width:100us，duty cycle:10%,Vgs=2.99V,Vds=50V,Idq=120mA Freq(MHz) Pin

Features

High Efficiency and Linear Gain Operations.
Integrated ESD Protection.
Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature Table 2. Thermal Characteristics Characteristic.
Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation.
Pb-free, RoHS-compliant Symbol VDSS VGS VDD Ts.

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Published: Aug 5, 2018 |