Datasheet4U Logo Datasheet4U.com

SPD30N03S2L-20G - Power-Transistor

Download the SPD30N03S2L-20G datasheet PDF. This datasheet also covers the SPD30N03S2L-20 variant, as both devices belong to the same power-transistor family and are provided as variant models within a single manufacturer datasheet.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPD30N03S2L-20_InfineonTechnologiesAG.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
SPD30N03S2L-20 Power-Transistor Infineon Technologies
SPD30N03S2L-07 Power-Transistor Infineon Technologies
SPD30N03S2L-07G Power-Transistor Infineon Technologies
SPD30N03S2L-10 Power-Transistor Infineon Technologies
SPD30N03S2L-10G Power-Transistor Infineon Technologies

Other Datasheets by Infineon

Part Number Description
SPD30P06PG Power Transistor
SPD01N60C3 Cool MOS Power Transistor
SPD02N80C3 Power Transistor
SPD04N60C3 Power Transistor
SPD04N60S5 Cool MOS Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant SPD30N03S2L-20 G Product Summary VDS 30 V RDS(on) 20 mΩ ID 30 A PG- TO252 -3 Type Package Marking SPD30N03S2L-20G PG- TO252 -3 2N03L20 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) ID TC=25°C Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=-V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage tempera
Published: |