PTFB213004F - High Power RF LDMOS Field Effect Transistor

Infineon

Datasheet Details

Part number	PTFB213004F
Manufacturer	Infineon
File Size	395.40 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFB213004F-Infineon.pdf

The PTFB213004F is a 300-watt LDMOS FET designed for class AB operation in cellular amplifiers covering the 2110 to 2170 MHz frequency band.

include high peak power, input and output match, and a thermally-enhanced, open-cavity earless ceramic package. PTFB213004F Package H-37275-6/2 ACP Up & Low (dBc) Drain Efficiency (%) Single-carrier WCDMA Drive-up VDD = 30 V, IDQ = 2.4 A, ƒ = 2170 MHz, 3GPP WCDMA signal, PAR = 7.5 dB, 3.84 MHz bandwidth -10 50 -20 40 Efficiency -30 30 -40 ACP low -50 -60 34 ACP up 38 42 46 50 Output Power, avg. (dBm) 20 10 0 54 Features.
Broadband internal matching.
Enhanced for use.

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Published: Nov 27, 2016 |