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PTFB241402F - High Power RF LDMOS Field Effect Transistor

Infineon Technologies

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Datasheet Details

Part number	PTFB241402F
Manufacturer	Infineon Technologies
File Size	439.18 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFB241402F-InfineonTechnologies.pdf

PTFB241402F Product details

Description

The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.

Features

Broadband internal matching.
Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%.
Increased negative gate-source voltage range for improved performance in Doherty amplifiers.
Integrated ESD protection.
Excellent thermal stability.

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Published: Jun 9, 2014 |