PTFB241402F Datasheet (Infineon Technologies) - High Power RF LDMOS Field Effect Transistor

PTFB241402F, High Power RF LDMOS Field Effect Transistor

The PTFB241402F integrates two LDMOS FETs into one open-cavity ceramic package.

It is designed for cellular amplifier applications in the 2300 to 2400 MHz frequency band.

Manufactured with Infineon’s advanced LDMOS process, this device offers excellent thermal performance and superior reliability.

PTFB241402F Features

* Broadband internal matching

* Typical CW performance, single side - Output power (1dB compression) = 70 W - Efficiency = 55%

* Increased negative gate-source voltage range for improved performance in Doherty amplifiers

* Integrated ESD protection

* Exce