PTFB201402FC - High Power RF LDMOS Field Effect Transistor

Infineon

Datasheet Details

Part number	PTFB201402FC
Manufacturer	Infineon
File Size	412.16 KB
Description	High Power RF LDMOS Field Effect Transistor
Datasheet	PTFB201402FC-Infineon.pdf

The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package.

Broadband internal matching.
Typical CW performance, 28 V, single side - Output power, P1dB = 70 W - Efficiency = 56%.
Integrated ESD protection.
Excellent thermal stability.
Capable of handling 10:1 VSWR @ 28 V, 70 W (CW) output power, per s.

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Published: Nov 27, 2016 |