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IQD063N15NM5CGSC 150V MOSFET

IQD063N15NM5CGSC Description

Public IQD063N15NM5CGSC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 150 V .
1 Maxi.

IQD063N15NM5CGSC Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* Optimized design for double side cooling
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21

IQD063N15NM5CGSC Applications

* Table 1 Parameter VDS RDS(on),max ID Qoss QG Key Performance Parameters Value Unit 150 V 6.32 mΩ 151 A 136 nC 48 nC Type/Ordering Code IQD063N15NM5CGSC Package PG‑WHTFN‑9 PG‑WHTFN‑9 5 6 78 9 4 3 2 1 Drain Pin 5-8 Gate
* 1 Pin 9 Source
* 1: Internal body diode Pin 1-4

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