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IQD005N04NM6 MOSFET

IQD005N04NM6 Description

IQD005N04NM6 MOSFET OptiMOSTM 6 Power-Transistor, 40 V .

IQD005N04NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Superior thermal resistance
* 100% avalanche tested
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for

IQD005N04NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 40 V RDS(on),max 0.47 mΩ ID 610 A Qoss 142 nC QG 130 nC PG-TSON-8 5 6 7 8 4 3 2 1 Drain Pin 5-8 Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3 Type / Ordering Code IQD005N04NM6 Package PG-TSON-8

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