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IQD016N08NM5SC 80V MOSFET

IQD016N08NM5SC Description

Public IQD016N08NM5SC Final datasheet MOSFET OptiMOS™ 5 Power‑Transistor, 80 V .
1 Maxi.

IQD016N08NM5SC Features

* N‑channel, normal level
* Very low on‑resistance RDS(on)
* Superior thermal resistance
* Optimized design for double side cooling
* 100% avalanche tested
* Pb‑free lead plating; RoHS compliant
* Halogen‑free according to IEC61249‑2‑21 Product

IQD016N08NM5SC Applications

* Table 1 Parameter VDS RDS(on),max ID Qoss QG Key Performance Parameters Value Unit 80 V 1.57 mΩ 323 A 123 nC 106 nC Type/Ordering Code IQD016N08NM5SC Package PG‑WHSON‑8 PG‑WHSON‑8 5 67 8 tab 4 3 21 Drain Pin 5-8, tab Gate
* 1 Pin 4 Source
* 1: Internal body diode Pin 1-3

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