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IPT067N20NM6 200V MOSFET

IPT067N20NM6 Description

IPT067N20NM6 MOSFET OptiMOSTM 6 Power-Transistor, 200 V .

IPT067N20NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Pb-free lead plating; RoHS compli

IPT067N20NM6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 200 V RDS(on),max 6.7 mΩ ID 137 A Qoss 226 nC QG 71 nC Qrr 339 nC Type / Ordering Code IPT067N20NM6 Package PG-HSOF-8 TOLL Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Marking 067N20N6 Related Links -

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200V MOSFET Infineon
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