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IPT012N06N - 60V MOSFET

General Description

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Key Features

  • 100% avalanche tested.
  • Superior thermal resistance.
  • N-channel.
  • Qualified according to JEDEC1) for target.

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IPT012N06N MOSFET OptiMOSTMPower-Transistor,60V Features •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 1.2 mΩ ID 313 A Qoss 119 nC QG(0V..10V) 106 nC HSOF Tab 12345 678 Drain Tab Gate Pin 1 Source Pin 2-8 Type/OrderingCode IPT012N06N Package PG-HSOF-8 Marking 012N06N RelatedLinks - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2019-07-15 OptiMOSTMPower-Transistor,60V IPT012N06N TableofContents Description . . . . . . . . .