IPP076N12N3, IPP076N12N3G Power-Transistor

Infineon

IPP076N12N3 Description

IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor .

IPP076N12N3 Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; halogen free

📥 Download Datasheet

IPP076N12N3 Datasheet Preview — This datasheet PDF includes multiple part numbers: IPP076N12N3, IPP076N12N3G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number: IPP076N12N3, IPP076N12N3G
Manufacturer: Infineon ↗
File Size: 483.78 KB
Datasheet: IPP076N12N3G-Infineon.pdf
Description: Power-Transistor
Note: This datasheet PDF includes multiple part numbers: IPP076N12N3, IPP076N12N3G.
Please refer to the document for exact specifications by model.

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Power-Transistor Infineon

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