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IPP073N13NM6 MOSFET

IPP073N13NM6 Description

IPP073N13NM6 MOSFET OptiMOSTM 6 Power-Transistor, 135 V .

IPP073N13NM6 Features

* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* 100% avalanche tested
* 175°C operating temperature
* Optimized for motor drives and battery p

IPP073N13NM6 Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Table 1 Key Performance Parameters Parameter Value Unit VDS 135 V RDS(on),max 7.3 mΩ ID 98 A Qoss 75

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