Datasheet4U Logo Datasheet4U.com

IPN60R600P7S - Power-Transistor

IPN60R600P7S Description

IPN60R600P7S MOSFET 600V CoolMOSª P7 Power Transistor The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFE.

IPN60R600P7S Features

* Suitable for hard and soft switching (PFC and LLC)
* Integrated Gate Resistor to enable excellent balance between efficiency and ease of use
* RDS(on)
* A below 1Ohm
* mm², enables low RDSON/package
* ESD diode from 180mOhms and above
* Ser

📥 Download Datasheet

Preview of IPN60R600P7S PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IPN10EL-S - PN Half Bridge Driver IC (Infineon Technologies)
  • IPN1M50T-H - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)
  • IPN2M50-H - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)
  • IPN2M50T-H - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)
  • IPN2M50T-HL - SLLIMM-nano small low-loss intelligent molded module IPM (STMicroelectronics)

📌 All Tags

Power-Transistor Infineon
Infineon IPN60R600P7S-like datasheet