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IPDQ60R017S7A - 600V MOSFET

Description

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Features

  • Optimized for low switching frequency in high-end.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPDQ60R017S7A MOSFET 600VCoolMOSªSJS7APowerDevice IPDQ60R017S7AisahighvoltagepowerMOSFET,designedasstatic switchaccordingtothesuperjunction(SJ)principlepioneeredbyInfineon Technologies. PG-HDSOP-22 22 IPDQ60R017S7AcombinestheexperienceoftheleadingSJMOSFET 12 TAB supplierwithhighclassinnovationenablinglowRDS(on)inQDPAKpackage. 1 TheS7Aseriesisoptimisedforlowfrequencyswitchingandhighcurrent 11 applicationlikecircuitbreakers. Features •Optimizedforlowswitchingfrequencyinhigh-endapplications(circuit breakersanddiodeparalleling/replacementinbridgerectifiers). •S7AtechnologyenablesbestinclassRDS(on)insmallestfootprint. •KelvinSourcepinimprovesswitchingperformanceathighcurrent.
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