Datasheet4U Logo Datasheet4U.com

IPDQ60R016CM8 - MOSFET

Description

.

.

.

.

Features

  • Suitable for hard and soft switching topologies thanks to an   outstanding commutation ruggedness.
  • Significant reduction of switching and conduction losses.
  • Best in class RDS(on) per package products enabled by ultra low RDS(on).
  • A Benefits.
  • Ease of use and fast design-in through low ringing tendency and usage   across PFC and PWM stages.
  • Simplified thermal management thanks to our advanced die attach   technique.
  • Increased power densi.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IPDQ60R016CM8 MOSFET 600VCoolMOSªCM8PowerTransistor PG-HDSOP-22 TheCoolMOS™8thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V 22 CoolMOS™CM8seriesisthesuccessortotheCoolMOS™7. ItcombinesthebenefitsofafastswitchingSJMOSFETwithexcellent 12 TAB easeofuse,e.glowringingtendency,implementedfastbodydiode(CFD) 1 forallproductswithoutstandingrobustnessagainsthardcommutationand 11 excellentESDcapability.Furthermore,extremelylowswitchingand conductionlossesofCM8,makeswitchingapplicationsevenmore efficient.
Published: |