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IPD5N25S3-430 - Power-Transistor

Features

  • N-channel - Enhancement mode.
  • AEC qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green Product (RoHS compliant).
  • 100% Avalanche tested IPD5N25S3-430 Product Summary V DS R DS(on),max ID 250 V 430 mW 5A PG-TO252-3-313 Type IPD5N25S3-430 Package PG-TO252-3- Marking 3N25430 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) Aval.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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OptiMOS™-T Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPD5N25S3-430 Product Summary V DS R DS(on),max ID 250 V 430 mW 5A PG-TO252-3-313 Type IPD5N25S3-430 Package PG-TO252-3- Marking 3N25430 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current1) Avalanche energy, single pulse1) Avalanche current, single pulse Reverse diode dv /dt Gate source voltage Power dissipation ID I D,pulse E AS I AS dv /dt V GS P tot T C=25°C, V GS=10V T C=100°C, V GS=10V1) T C=25°C I D=1.
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