Datasheet4U Logo Datasheet4U.com

IPD50N03S2-07 - Power Transistor

Description

and charts stated herein.

Warnings Due to technical requirements, components may contain dangerous substances.

Features

  • N-channel - Enhancement mode.
  • Automotive AEC Q101 qualified.
  • MSL1 up to 260°C peak reflow.
  • 175°C operating temperature.
  • Green package (lead free).
  • Ultra low Rds(on).
  • 100% Avalanche tested IPD50N03S2-07 Product Summary V DS R DS(on),max ID 30 V 7.3 mΩ 50 A PG-TO252-3-11 Type IPD50N03S2-07 Package Marking PG-TO252-3-11 PN0307 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IPD50R1K4CE N-Channel MOSFET INCHANGE
IPD50R280CE N-Channel MOSFET INCHANGE
IPD50R2K0CE N-Channel MOSFET INCHANGE
IPD50R380CE N-Channel MOSFET INCHANGE
IPD50R399CP N-Channel MOSFET INCHANGE

Other Datasheets by Infineon

Part Number Description
IPD50N03S2L-06 Power Transistor
IPD50N03S4L-06 Power Transistor
IPD50N04S3-08 Power Transistor
IPD50N04S3-09 Power Transistor
IPD50N04S4-08 Power Transistor

Full PDF Text Transcription

Click to expand full text
OptiMOS® Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested IPD50N03S2-07 Product Summary V DS R DS(on),max ID 30 V 7.
Published: |