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IPB530N15N3G Power Transistor

IPB530N15N3G Description

IPB530N15N3 G IPD530N15N3 G IPI530N15N3 G IPP530N15N3 G OptiMOSTM3 Power-Transistor .

IPB530N15N3G Features

* N-channel, normal level
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID 150 V 53 mW 21 A
* 175 °C operating temperature
* Pb-free lead plating; RoHS compliant; Halogen Free
* Q

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