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IPAW60R600P7S - Power-Transistor

Features

  • Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness.
  • Significant reduction of switching and conduction losses.
  • Excellent ESD robustness >2kV (HBM) for all products.
  • Better RDS(on)/package products compared to competition enabled by a  low RDS(on).
  • A (bel.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IPAW60R600P7S MOSFET 600VCoolMOSªP7PowerTransistor TheCoolMOS™7thgenerationplatformisarevolutionarytechnologyfor highvoltagepowerMOSFETs,designedaccordingtothesuperjunction (SJ)principleandpioneeredbyInfineonTechnologies.The600V CoolMOS™P7seriesisthesuccessortotheCoolMOS™P6series.It combinesthebenefitsofafastswitchingSJMOSFETwithexcellentease ofuse,e.g.verylowringingtendency,outstandingrobustnessofbody diodeagainsthardcommutationandexcellentESDcapability. Furthermore,extremelylowswitchingandconductionlossesmake switchingapplicationsevenmoreefficient,morecompactandmuch cooler.
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