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IMZA120R030M1H - 1200V SiC Trench MOSFET

Description

1 drain 2 source 3 Kelvin sense contact 4 gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Copyright © Infineon Techn Type IMZA120R030M1H Package PG-TO247-4-U02 Marking 12M1H030

Features

  • VDSS = 1200 V at Tvj = 25°C.
  • IDDC = 70 A at TC = 25°C.
  • RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C.
  • Very low switching losses.
  • Short circuit withstand time 3 µs.
  • Benchmark gate threshold voltage, VGS(th) = 4.2 V.
  • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
  • Robust body diode for hard commutation.
  • . XT interconnection technology for best-in-class thermal performance TO-247-4.
  • 4P.

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IMZA120R030M1H CoolSiC™ 1200 V SiC Trench MOSFET Final datasheet CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET with .XT interconnection technology Features • VDSS = 1200 V at Tvj = 25°C • IDDC = 70 A at TC = 25°C • RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C • Very low switching losses • Short circuit withstand time 3 µs • Benchmark gate threshold voltage, VGS(th) = 4.2 V • Robust against parasitic turn on, 0 V turn-off gate voltage can be applied • Robust body diode for hard commutation • .
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