IMZA120R030M1H Datasheet (Infineon) - 1200V SiC Trench MOSFET

IMZA120R030M1H, 1200V SiC Trench MOSFET

1 * drain 2 * source 3 * Kelvin sense contact 4 * gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L ) Copyright © Infineon Techn Type IMZA120R030M1H Package PG-TO247-4-U02 Marking 12M1H030

IMZA120R030M1H Features

* VDSS = 1200 V at Tvj = 25°C

* IDDC = 70 A at TC = 25°C

* RDS(on) = 30 mΩ at VGS = 18 V, Tvj = 25°C

* Very low switching losses

* Short circuit withstand time 3 µs

* Benchmark gate threshold voltage, VGS(th) = 4.2 V

* Robust against parasitic