Description
1
Drain 2
Source 3
Kelvin sense contact 4
Gate Note: the source and sense pins are not exchangeable, their exchange might lead to malfunction (only for 4pin, TO263-7L )
Copyright © Infineon Techn
Type IMZA120R020M1H
Package PG-TO247-4-U02
Marking 12M1H020
Datasheet www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.30 2024-11-15
IMZA120R020M1H
CoolSiC™ 1200 V SiC Trench MOSFET
Table of
Features
- VDSS = 1200 V at Tvj = 25°C.
- IDDC = 98 A at TC = 25°C.
- RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C.
- Very low switching losses.
- Short circuit withstand time 3 µs.
- Benchmark gate threshold voltage, VGS(th) = 4.2 V.
- Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
- Robust body diode for hard commutation.
- . XT interconnection technology for best-in-class thermal performance
TO-247-4.
- 4P.
IMZA120R020M1H-Infineon.pdf
