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IMW65R072M1H - 650V MOSFET

Description

1 Maximum ratings 3 T

Features

  • Optimized switching behavior at higher currents.
  • Commutation robust fast body diode with low Qfr.
  • Superior gate oxide reliability.
  • Tj,max=175°C and excellent thermal behavior.
  • Lower RDS(on) and pulse current dependency on temperature.
  • Increased avalanche capability.
  • Compatible with standard drivers.
  • Kelvin source provides up to 4 times lower switching losses Benefits.
  • Unique combination of high performance, high re.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Public IMW65R072M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology developed in Infineon in more than 20 years. Leveraging the wide bandgap SiC material characteristics, the 650V CoolSiC™ MOSFET offers a unique combination of performance, reliability and ease of use. Suitable for high temperature and harsh operations, it enables the simplified and cost effective deployment of the highest system efficiency.
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