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IMW65R010M2H - SiC MOSFET

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Infineon

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IMW65R010M2H SiC MOSFET by Infineon - Datasheet Preview — Datasheet preview – IMW65R010M2H

Datasheet Details

Part number	IMW65R010M2H
Manufacturer	Infineon
File Size	1.12 MB
Description	SiC MOSFET
Datasheet	IMW65R010M2H Datasheet
Additional preview pages of the IMW65R010M2H datasheet.

IMW65R010M2H Product details

Description

1 Maximum ratings 3 T

Features

Ultra‑low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Robust against parasitic turn‑on even with 0 V turn‑off gate voltage.
Flexible driving voltage and compatible with bipolar driving scheme.
Robust body diode operation under hard commutation events.
. XT interconnection technology for best‑in‑class thermal performance Benefits.
Enables high efficiency and high power density designs.
Facilitates gre.

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Published: Apr 15, 2025 |