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IMW120R045M1 - 1200V SiC Trench MOSFET

Infineon

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Datasheet Details

Part number	IMW120R045M1
Manufacturer	Infineon ↗
File Size	1.35 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMW120R045M1-Infineon.pdf

IMW120R045M1 Product details

Features

Very low switching losses Gate.
Threshold-free on state characteristic pin 1.
Wide gate-source voltage range.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
0V turn-off gate voltage.
Fully controllable dv/dt.
Commutation robust body diode, ready for synchronous rectification.
Temperature independent turn-off switching losses Benefits.
Efficiency improvement.
Enabling higher frequency.
Increased power density.
Cooling effo.

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Published: Sep 25, 2019 |