IMW120R020M1H - 1200V SiC Trench MOSFET

Infineon

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Datasheet Details

Part number	IMW120R020M1H
Manufacturer	Infineon
File Size	1.28 MB
Description	1200V SiC Trench MOSFET
Datasheet	IMW120R020M1H-Infineon.pdf

IMW120R020M1H Product details

Description

1 gate 2 drain 3 source TO-247 3Pin 2021-10-27 restricted Copyright © Infineon T Type IMW120R020M1H Package PG-TO247-3-U06 Marking 12M1H020 Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.40 2024-11-15 IMW120R020M1H CoolSiC™ 1200 V SiC Trench MOSFET Table of contents Table of contents Description

Features

VDSS = 1200 V at Tvj = 25°C.
IDDC = 98 A at TC = 25°C.
RDS(on) = 19 mΩ at VGS = 18 V, Tvj = 25°C.
Very low switching losses.
Short circuit withstand time 3 µs.
Benchmark gate threshold voltage, VGS(th) = 4.2 V.
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance Potential.

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Published: Aug 19, 2023 |