Datasheet4U Logo Datasheet4U.com

IMTA65R026M2H 650V SiC MOSFET

IMTA65R026M2H Description

Public IMTA65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,.
1 Maxi.

IMTA65R026M2H Features

* Ultra‑low switching losses
* Benchmark gate threshold voltage, VGS(th) = 4.5 V
* Robust against parasitic turn‑on even with 0 V turn‑off gate voltage
* Flexible driving voltage and compatible with bipolar driving scheme
* Robust body diode operation under ha

IMTA65R026M2H Applications

* SMPS
* Solar PV inverters
* Energy storage and battery formation
* UPS
* EV charging infrastructure
* Motor drives Product validation Fully qualified according to JEDEC for Industrial Applications Please note: The source and driver source pins are no

📥 Download Datasheet

Preview of IMTA65R026M2H PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IMT-901 - Microstep Constant Current Driver IC (Nanotech)
  • IMT17 - DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR (Diodes)
  • IMT18 - General purpose transistors (Rohm)
  • IMT1A - General Purpose Dual Transistors (Rohm)
  • IMT2A - Dual Transistor (Rohm)
  • IMT3A - General purpose dual transistors (Rohm)
  • IMT4 - DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR (Diodes Incorporated)
  • IMT901 - Microstep Constant Current Driver IC (Nanotech)

📌 All Tags

650V SiC MOSFET Infineon
Infineon IMTA65R026M2H-like datasheet