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IMDQ65R007M2H - SiC MOSFET

Infineon

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Datasheet Details

Part number	IMDQ65R007M2H
Manufacturer	Infineon
File Size	1.20 MB
Description	SiC MOSFET
Datasheet	IMDQ65R007M2H-Infineon.pdf

IMDQ65R007M2H Product details

Description

1 Maximum ratings 3 Thermal characteristics .

Features

Ultra‑low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Robust against parasitic turn‑on even with 0 V turn‑off gate voltage.
Flexible driving voltage and compatible with bipolar driving scheme.
Robust body diode operation under hard commutation events.
. XT interconnection technology for best‑in‑class thermal performance Benefits.
Enables high efficiency and high power density designs.
Facilitates gre.

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Published: Apr 18, 2025 |