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IMBG40R025M2H - G2 MOSFET

Infineon

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Datasheet Details

Part number	IMBG40R025M2H
Manufacturer	Infineon
File Size	1.28 MB
Description	G2 MOSFET
Datasheet	IMBG40R025M2H-Infineon.pdf

IMBG40R025M2H Product details

Description

1 Maximum ratings 3 Thermal characteristics .

Features

Ideal for high frequency switching and synchronous rectification.
Commutation robust fast body diode with low Qfr.
Low RDS(on) dependency on temperature.
Benchmark gate threshold voltage, VGS(th) = 4.5 V.
Recommended gate driving voltage 0 V to 18 V.
. XT interconnection technology for best‑in‑class thermal performance.
100% avalanche tested Potential.

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Published: Sep 2, 2024 |