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IMBG120R045M1H - 1200V SiC Trench MOSFET

Infineon

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Datasheet Details

Part number	IMBG120R045M1H
Manufacturer	Infineon
File Size	742.89 KB
Description	1200V SiC Trench MOSFET
Datasheet	IMBG120R045M1H-Infineon.pdf

IMBG120R045M1H Product details

Features

Very low switching losses.
Short circuit withstand time 3 µs.
Fully controllable dV/dt.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
Robust against parasitic turn on, 0V turn-off gate voltage can be applied.
Robust body diode for hard commutation.
. XT interconnection technology for best-in-class thermal performance.
Package creepage and clearance distance > 6.1mm.
Sense pin for optimized switching performance.

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Published: Aug 28, 2023 |