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IMBF170R650M1 - Silicon Carbide MOSFET

Infineon

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Datasheet Details

Part number	IMBF170R650M1
Manufacturer	Infineon
File Size	1.24 MB
Description	Silicon Carbide MOSFET
Datasheet	IMBF170R650M1-Infineon.pdf

IMBF170R650M1 Product details

Features

Revolutionary semiconductor material - Silicon Carbide.
Optimized for fly-back topologies.
12V/0V gate-source voltage compatible with most fly-back controllers.
Very low switching losses.
Benchmark gate threshold voltage, VGS(th) = 4.5V.
Fully controllable dV/dt for EMI optimization Benefits.
Reduction of system complexity.
Directly drive from fly-back controller.
Efficiency improvement and cooling effort reduction.
Enabling higher frequency Pot.

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Published: Aug 5, 2023 |