IKZ75N65ES5 - IGBT

Description

Features

High speed S5 technology offering.
High speed smooth switching device for hard & soft switching.
Very Low VCEsat, 1.42V at nominal current.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with full rated RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon

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Datasheet Details

Part number	IKZ75N65ES5
Manufacturer	Infineon
File Size	1.39 MB
Description	IGBT
Datasheet	IKZ75N65ES5 Datasheet

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Full PDF Text Transcription

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IKZ75N65ES5 TRENCHSTOPTM5softswitchingIGBT TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrent ratedRAPID1fastandsoftantiparalleldiode FeaturesandBenefits: HighspeedS5technologyoffering •Highspeedsmoothswitchingdeviceforhard&softswitching •VeryLowVCEsat,1.42Vatnominalcurrent •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfullratedRAPID1fastantiparalleldiode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.

Published: Jun 10, 2020 |