IKZ75N65EL5 - IGBT

Description

Features

Low VCE(sat) L5 technology offering.
Very low collector-emitter saturation voltage VCEsat.
Best-in-Class tradeoff between conduction and switching losses.
650V breakdown voltage.
Low gate charge QG.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

Infineon

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Datasheet Details

Part number	IKZ75N65EL5
Manufacturer	Infineon
File Size	1.79 MB
Description	IGBT
Datasheet	IKZ75N65EL5 Datasheet
Additional preview pages of the IKZ75N65EL5 datasheet.

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Full PDF Text Transcription

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IGBT LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode IKZ75N65EL5 650VDuoPackIGBTanddiode LowVCE(sat)seriesfifthgeneration Datasheet IndustrialPowerControl IKZ75N65EL5 LowVCE(sat)seriesfifthgeneration LowVCE(sat)IGBTinTRENCHSTOPTM5technologycopackedwithRAPID1 fastandsoftantiparalleldiode FeaturesandBenefits: LowVCE(sat)L5technologyoffering •Verylowcollector-emittersaturationvoltageVCEsat •Best-in-Classtradeoffbetweenconductionandswitchinglosses •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating •RoHScompliant •CompleteproductspectrumandPSpicemodels: http://www.infineon.

Published: Feb 17, 2016 |