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IKY50N120CH3 IGBT

IKY50N120CH3 Description

IKY50N120CH3 High speed switching series third generation IGBT Low switching losses IGBT in Highspeed3 technology copacked with soft, fast recovery fu.

IKY50N120CH3 Features

* High speed H3 technology offers:
* Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High speed H3 technology
* High efficiency in hard switching and resonant topologies
* 10µsec short circuit withstand time at Tvj=175°C
* Easy

IKY50N120CH3 Applications

* Industrial UPS
* Charger
* Energy Storage
* Three-level Solar String Inverter Product Validation: Qualified for industrial applications according to the relevant tests of JEDEC47/20/22 Key Performance and Package Parameters Type VCE IC VCEsat, Tvj=25°C IKY50N

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