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IKY40N120CH3 - IGBT

Description

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Features

  • High speed H3 technology offers:.
  • Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High speed H3 technology.
  • High efficiency in hard switching and resonant topologies.
  • 10µsec short circuit withstand time at Tvj=175°C.
  • Easy paralleling capability due to positive temperature coefficient in VCE(sat).
  • Low EMI.
  • Low Gate Charge QG.
  • Very soft, fast recovery full current anti-parallel diode.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IKY40N120CH3 HighspeedswitchingseriesthirdgenerationIGBT LowswitchinglossesIGBTinHighspeed3technologycopackedwithsoft,fast recoveryfullcurrentratedanti-parallelEmitterControlleddiode  Features: HighspeedH3technologyoffers: •Ultra-lowlossswitchinglossesthankstoKelvinemitterpin packageincombinationwithHighspeedH3technology •Highefficiencyinhardswitchingandresonanttopologies •10µsecshortcircuitwithstandtimeatTvj=175°C •Easyparallelingcapabilityduetopositivetemperature coefficientinVCE(sat) •LowEMI •LowGateChargeQG •Verysoft,fastrecoveryfullcurrentanti-paralleldiode •Maximumjunctiontemperature175°C •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.
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