Datasheet4U.com

IKW40N65ES5 - IGBT

Infineon

📥 Download Datasheet

IKW40N65ES5 Datasheet Preview — Preview of IKW40N65ES5 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	IKW40N65ES5
Manufacturer	Infineon
File Size	2.00 MB
Description	IGBT
Datasheet	IKW40N65ES5-Infineon.pdf

IKW40N65ES5 Product details

Description

. . .

Features

C High speed S5 technology offering.
High speed smooth switching device for hard & soft switching.
Very Low VCEsat, 1.35V at nominal current.
Plug and play replacement of previous generation IGBTs.
650V breakdown voltage.
Low gate charge QG.
IGBT copacked with full rated RAPID 1 fast antiparallel diode.
Maximum junction temperature 175°C.
Qualified according to JEDEC for target.

📁 IKW40N65ES5 Similar Datasheet

IKW40T120 - IGBT (Infineon Technologies)
IKW03N120H2 - HighSpeed 2-Technology (Infineon Technologies)
IKW08T120 - IGBT (Infineon Technologies)
IKW15T120 - IGBT (Infineon Technologies)
IKW20N60H3 - IGBT (Infineon Technologies)
IKW20N60T - IGBT (Infineon Technologies)
IKW25N120H3 - High speed IGBT (Infineon Technologies)
IKW25N120T2 - IGBT (Infineon Technologies)

Other Datasheets by Infineon

IKW40N65F5 - IGBT
IKW40N65F5A - IGBT
IKW40N65H5 - IGBT
IKW40N65H5A - IGBT
IKW40N65WR5 - Reverse conducting IGBT
IKW40N60DTP - IGBT

Published: Nov 18, 2015 |