IKW25N120H3 - High speed IGBT

Infineon Technologies

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Datasheet Details

Part number	IKW25N120H3
Manufacturer	Infineon Technologies
File Size	1.60 MB
Description	High speed IGBT
Datasheet	IKW25N120H3-InfineonTechnologies.pdf

IKW25N120H3 Product details

Description

Type IKW25N120H3 C G E Package PG-TO247-3 Marking K25H1203 Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document Revision 1.00 2021-09-08 IKW25N120H3 High speed DuoPack: IGBT in Trench and Fieldstop technology Table of contents Table of contents Description .

Features

VCE = 1200 V.
IC = 25 A.
Very low VCE,sat.
Low EMI.
Very soft, fast recovery antiparallel diode.
Maximum junction temperature Tvjmax = 175°C.
Qualified according to JEDEC for target.

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Published: Oct 30, 2014 |