Datasheet Details
| Part number | IKQ40N120CH3 |
|---|---|
| Manufacturer | Infineon |
| File Size | 1.59 MB |
| Description | IGBT |
| Datasheet |
 IKQ40N120CH3 Datasheet
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Description
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Features
- C High speed H3 technology offers:.
- High efficiency in hard switching and resonant topologies.
- 10µsec short circuit withstand time at Tvj=175°C.
- Easy paralleling capability due to positive temperature coefficient in VCEsat.
- Low EMI.
- Low Gate Charge QG.
- Very soft, fast recovery full current anti-parallel diode.
- Maximum junction temperature Tvjmax=175°C.
- Pb-free lead plating; RoHS compliant.
- Complete product spectr.