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IGLT65R110B2 650V Bidirectional switch

IGLT65R110B2 Description

Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Sw.
1 Maxi.

IGLT65R110B2 Features

* 650 V CoolGaN™ technology with 850 VSS surge immunity
* Superior rugged Gate Injection Transistor (GIT) structure
* Dual‑gate for independent bi‑directional functionality
* Superior performance of RSS(on) over operating frequency
* Reliable Thermal Cycling o

IGLT65R110B2 Applications

* The CoolGaN™ BDS monolithically integrates a substrate voltage control circuit, thanks to Infineon's proprietary technology, this reduces design complexity. IGLT65R110B2 is offered in Infineon’s TOLT, top‑side cooling package specially designed to enable the highest power densities for power‑demand

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