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IGLT65R055D2 Power Transistor

IGLT65R055D2 Description

Public IGLT65R055D2 Target datasheet CoolGaN™ Gen2 650 V CoolGaN™ enhancement‑mode Power Transistor Infineon’s CoolGaN™ is a highly efficient GaN (ga.
1 Maxi.

IGLT65R055D2 Features

* Enhancement mode transistor ‑ Normally OFF switch
* Ultra fast switching
* No reverse‑recovery charge
* Capable of reverse conduction
* Low gate charge, low output charge
* Superior commutation ruggedness
* ESD (HBM/CDM) JEDEC standards Benef

IGLT65R055D2 Applications

* ​Industrial, telecom, datacenter SMPS, charger and adapter based on half‑bridge topologies (half‑bridge topologies for hard and soft switching such as Totem pole PFC, high frequency LLC). Product validation Fully qualified according to JEDEC for Industrial Applications Please note: Target Datasheet

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