IDH08G120C5 Diode

Infineon

Description

Diode Silicon Carbide Schottky Diode IDH08G120C5 5th Generation CoolSiC™ 1200 V SiC Schottky Diode Final Datasheet Rev.2.1 2017-07-21 Industrial Powe.
2 Table of Contents3 Maximum Ratings 4 Thermal Resistances 4 Electrical Characteristics5 Electrical Characteristics Diagram 6 Package Drawings 9 Revis.

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Datasheet Specifications

Part number: IDH08G120C5
Manufacturer: Infineon ↗
File Size: 885.34 KB
Datasheet: IDH08G120C5-Infineon.pdf
Description: Diode

Features

* Revolutionary semiconductor material - Silicon Carbide
* No reverse recovery current / No forward recovery
* Temperature independent switching behavior
* Low forward voltage even at high operating temperature
* Tight forward voltage distribution
* Excellent thermal perform

Applications

* Pb-free lead plating; RoHS compliant Benefits
* System efficiency improvement over Si diodes
* Enabling higher frequency / increased power density solutions
* System size / cost savings due to reduced heatsink requirements and smaller magnetics
* Reduced EMI
* Highest effic

IDH08G120C5 Distributors

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IDH08G120C5 Diode Infineon

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