Datasheet4U Logo Datasheet4U.com

D1065C5 SiC Schottky Barrier diodes

D1065C5 Description

SiC Silicon Carbide Diode 5th Generation thinQ!TM 650V SiC Schottky Diode IDW10G65C5 Final Datasheet Rev.2.2, 2013-01-15 Power Management & Multimark.
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.

D1065C5 Features

* Revolutionary semiconductor material - Silicon Carbide
* Benchmark switching behavior
* No reverse recovery/ No forward recovery
* Temperature independent switching behavior
* High surge current capability
* Pb-free lead plating; RoHS compliant
* Qualified according to

D1065C5 Applications

* Breakdown voltage tested at 22 mA2)
* Optimized for high temperature operation Benefits
* System efficiency improvement over Si diodes
* System cost / size savings due to reduced cooling requirements
* Enabling higher frequency / increased power density solutions
* Higher s

📥 Download Datasheet

Preview of D1065C5 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • D1065 - 2SD1065 (Sanyo Semicon Device)
  • D1060 - 2SD1060 (Sanyo Semicon Device)
  • D1061 - 2SD1061 (Sanyo Semicon Device)
  • D1062 - 2SD1062 (SavantIC)
  • D1063 - 2SD1063 (Sanyo)
  • D1064 - PNP/NPN Epitaxial Planar Silicon Tranasistors (Sanyo)
  • D1067 - monolithic step-down switch mode converter (DMS)
  • D1069 - 2SD1069 (Toshiba Semiconductor)

📌 All Tags

SiC Schottky Barrier diodes Infineon
Infineon D1065C5-like datasheet