Datasheet4U Logo Datasheet4U.com

D100E60 Fast Switching Emitter Controlled Diode

D100E60 Description

Fast Switching Emitter Controlled Diode IDW100E60 .

D100E60 Features

* 600V Emitter Controlled technology
* Fast recovery
* Soft switching
* Low reverse recovery charge
* Low forward voltage
* 175°C junction operating temperature
* Easy paralleling
* Pb-free lead plating; RoHS compliant
* Complete product spectrum and PSpice Model

D100E60 Applications

* Welding
* Motor drives PG-TO247-3 Type IDW100E60 VRRM 600V IF 100A Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current TC = 25C TC = 90C TC = 100C Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave Maximum repetitive forward

📥 Download Datasheet

Preview of D100E60 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
D100E60
Manufacturer
Infineon ↗
File Size
297.38 KB
Datasheet
D100E60-Infineon.pdf
Description
Fast Switching Emitter Controlled Diode

📁 Related Datasheet

  • D1000 - 2SD1000 (Renesas)
  • D1001 - 2SD1001 (Renesas)
  • D1001UK - METAL GATE RF SILICON FET (Seme LAB)
  • D1002UK - METAL GATE RF SILICON FET (Seme LAB)
  • D1003UK - METAL GATE RF SILICON FET (Seme LAB)
  • D1004 - METAL GATE RF SILICON FET (Seme LAB)
  • D10040180GT - GaAs Power Doubler (PDI)
  • D10040180GTH - GaAs Power Doubler (PDI)

📌 All Tags

Fast Switching Emitter Controlled Diode Infineon
Infineon D100E60-like datasheet