Datasheet Details
- Part number
- BSZ0501NSI
- Manufacturer
- Infineon ↗
- File Size
- 1.55 MB
- Datasheet
- BSZ0501NSI-Infineon.pdf
- Description
- MOSFET
BSZ0501NSI Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSZ0501NSI Data Sheet Rev.2.0 Final Power Management.
Features.
Optimized for high performance buck converters.
Monolithic integrated Schottky-like diode.
Very low on-resistance.
BSZ0501NSI Features
* Optimized for high performance buck converters
* Monolithic integrated Schottky-like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* N-channel
BSZ0501NSI Applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
2.0
mΩ
ID 40 A
QOSS
18
nC
QG(0V. .4.5V)
11.4
nC
OptiMOSTM5 Power-MOSFET, 30 V BSZ0501NSI
TSDSON-8 FL
(enla
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