Datasheet Details
- Part number
- BSZ0500NSI
- Manufacturer
- Infineon ↗
- File Size
- 1.56 MB
- Datasheet
- BSZ0500NSI-Infineon.pdf
- Description
- MOSFET
BSZ0500NSI Description
MOSFET Metal Oxide Semiconductor Field Effect Transistor OptiMOSTM OptiMOSTM5 Power-MOSFET, 30 V BSZ0500NSI Data Sheet Rev.2.0 Final Power Management.
Features.
Optimized for high performance buck converters.
Monolithic integrated Schottky-like diode.
Very low on-resistance.
BSZ0500NSI Features
* Optimized for high performance buck converters
* Monolithic integrated Schottky-like diode
* Very low on-resistance RDS(on) @ VGS=4.5 V
* 100% avalanche tested
* N-channel
BSZ0500NSI Applications
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS 30
V
RDS(on),max
1.5
mΩ
ID 40 A
QOSS
27
nC
QG(0V. .4.5V)
18
nC
OptiMOSTM5 Power-MOSFET, 30 V BSZ0500NSI
TSDSON-8 FL
(enlarg
📁 Related Datasheet
📌 All Tags