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BSZ018NE2LSI - Power-Transistor

BSZ018NE2LSI Description

OptiMOSTM Power-MOSFET .

BSZ018NE2LSI Features

* Optimized for high performance Buck converter
* Monolithic integrated Schottky like diode
* Very low on-resistance R DS(on) @ V GS=4.5 V
* 100% avalanche tested
* N-channel

BSZ018NE2LSI Applications

* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21 BSZ018NE2LSI Product Summary VDS RDS(on),max ID QOSS QG(0V. .10V) 25 V 1.8 mW 40 A 23 nC 36 nC PG-TSDSON-8 (fused leads) Type Package BSZ018NE2LSI PG-TSDSON-8 (fused leads) Marking 018NE2I Maximum

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