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BSZ018N04LS6 - MOSFET

BSZ018N04LS6 Description

BSZ018N04LS6 MOSFET OptiMOSTM 6 Power-Transistor, 40 V .

BSZ018N04LS6 Features

* Optimized for synchronous rectification
* Very low on-resistance RDS(on)
* 100% avalanche tested
* Superior thermal resistance
* N-channel
* Pb-free lead plating; RoHS compliant
* Halogen-free according to IEC61249-2-21
* 175 °C rated

BSZ018N04LS6 Applications

* Table 1 Key Performance Parameters Parameter Value Unit VDS 40 V RDS(on),max 1.8 mΩ ID 158 A Qoss 34 nC QG(0V. .10V) 31 nC QG(0V. .4.5V) 15 nC TSDSON-8 FL (enlarged source interconnection) S1 8D S2 7D S3 6D G4 5D Type / Ordering Code BSZ018N04LS6 Package PG-TSDSON-8 FL Marki

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