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BSF050N03LQ3G - Power-Transistor

BSF050N03LQ3G Description

BSF050N03LQ3 G OptiMOSTM3 Power-MOSFET .

BSF050N03LQ3G Features

* Optimized for high switching frequency DC/DC converter
* Very low on-resistance R DS(on)
* Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 5 60
* Low parasitic inductance
* Low profile (

BSF050N03LQ3G Applications

* V mΩ A Type BSF050N03LQ3 G Package MG-WDSON-2 Outline SQ Marking 1303 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C 60 A 38 V GS=10 V, T A=25 °C, R thJA=58 K/W2)

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Power-Transistor Infineon
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