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BSF024N03LT3G - Power-Transistor

BSF024N03LT3G Description

BSF024N03LT3 G OptiMOSTM3 Power-MOSFET .

BSF024N03LT3G Features

* Optimized for high switching frequency DC/DC converter
* Very low on-resistance R DS(on)
* Excellent gate charge x R DS(on) product (FOM) Product Summary V DS R DS(on),max ID 30 V 2.4 mΩ 106 A
* Low parasitic inductance
* Low profile (

BSF024N03LT3G Applications

* Type BSF024N03LT3 G Package MG-WDSON-2 Outline ST Marking 0703 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit Continuous drain current I D V GS=10 V, T C=25 °C 106 A V GS=10 V, T C=100 °C 67 V GS=10 V, T A=25 °C, R thJA=58 K/W2) 15 P

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Power-Transistor Infineon
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